22nd
Feb
FET (Field Effect Transistors) MCQ

FET (Field Effect Transistors) MCQ

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  • 22nd Feb, 2023
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Practice here the most popular FET (Field Effect Transistors) MCQ Questions, which are commonly asked in exams, interviews & placement drives.

FET (Field Effect Transistors) MCQ Test

1) What do you know about field-effect transistor (FET)?

  • A. a type of transistor which uses an electric field to control the flow of current
  • B.voltage
  • C.Current
  • D.None of the above

2) FET acts as constant current source in ___.

  • A. Ohmic region
  • B.Breakdown region
  • C.Pinch off region
  • D.All of the above

3) Which of the following is the common features between FETs and bipolars?

  • A. Difficult to bias
  • B.Low voltage gain
  • C.Low input impedance
  • D.Current controlled devices

4) Is FETs are preferred to BJTs at high frequencies because they are less noisy?

  • A. Yes
  • B.No

5) FETs are preferred to BJTs at high frequencies because they are ___.

  • A. less noisy
  • B.capable of handling highest frequencies
  • C.easy to fabricate
  • D.All of the above

6) A JFET has three terminals, namely ____.

  • A. cathode, anode, grid
  • B.emitter, base, collector
  • C.source, gate, drain
  • D.None of the above

7) The gate of a JFET is ___ biased.

  • A. reverse
  • B.forward
  • C.reverse as well as forward
  • D.None of the above

8) In saturation region JFET acts like a ___.

  • A. Switch
  • B.Short circuit
  • C.Bipolar device
  • D.Resistance

9) The input impedance of an ideal JFET ___.

  • A. is impossible to predict
  • B.approaches unity
  • C.approaches infinity
  • D.approaches zero

10) The name field effect is related to the ____ layers of a JFET.

  • A. depletion
  • B.gate
  • C.source
  • D.drain

11) MOSFET is a three-terminal device with gate (G), drain (D) and source (S) terminals.

  • A. True
  • B.False

12) Which of the following devices has the highest input impedance?

  • A. JFET
  • B.MOSFET
  • C.Crystal diode
  • D.ordinary transistor

13) A MOSFET uses the electric field of a ___ to control the channel current.

  • A. capacitor
  • B.battery
  • C.generator
  • D.All of the above

14) What is the full form of MOSFET?

  • A. metal–oxide–semiconductor field-effect transistor
  • B.metal–oxygen–semiconductor field-effect transistor
  • C.metal–oxide–semi field-effect transistor
  • D.All of the above

15) The source terminal of a JEFT corresponds to cathode of a vacuum tube.

  • A. True
  • B.False

16) The type of bias most often used with E-MOSFET circuits is ___.

  • A. constant current
  • B.drain-feedback
  • C.voltage-divider
  • D.zero biasing

17) The operation of a JFET involves a flow of ___.

  • A. Recombination carriers
  • B.Majority carriers
  • C.Minority carriers
  • D.All of the above

18) A FET differs from a bipolar transistor as it has ____.

  • A. simpler fabrication
  • B.negative resistance
  • C.high input impedance
  • D.All of the above

19) N-channel FETs are superior to P-channel FETs because ____.

  • A. these have a higher switching
  • B.these have a higher input impedance
  • C.mobility of electron is greater than that of holes
  • D.All of the above

20) A FET can be used as a variable ___.

  • A. Inductor
  • B.Capacitor
  • C.Voltage source
  • D.Current source

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